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dc.contributor.authorSheu, JTen_US
dc.contributor.authorKuo, JMen_US
dc.contributor.authorYou, KSen_US
dc.contributor.authorChen, CCen_US
dc.contributor.authorChang, KMen_US
dc.date.accessioned2014-12-08T15:39:00Z-
dc.date.available2014-12-08T15:39:00Z-
dc.date.issued2004-06-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2004.02.091en_US
dc.identifier.urihttp://hdl.handle.net/11536/26692-
dc.description.abstractA new method is proposed for fabricating silicon nanowires (SiNWs) on silicon substrates instead of on SOI wafers, providing a cheaper process; it also enables their electrical properties to be measured easily. Using scanning probe lithography, mask patterns for SiNWs were defined on a (110)-oriented bare silicon wafer. Subsequently silicon nitride spacers were produced and utilized to protect SiNWs during a dry-oxidation process, which was applied to isolate the SiNWs from the substrate. The field induced oxide mask patterns generated with a scanning probe microscope were around 50-60 mn in width, and SiNWs with 34 nm in width and 160 nm in height resulted after wet potassium hydroxide (KOH) orientation-dependent etching at 40degrees for 400 s. SiNWs with line width around 34 mn on the bare silicon wafer were achieved with the scanning probe lithography process and conventional IC processing. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectsilicon nanowiresen_US
dc.subjectscanning-probe lithographyen_US
dc.subjectorientation-dependent etchingen_US
dc.subjectnegative resistanceen_US
dc.titleA new fabrication technique for silicon nanowiresen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.mee.2004.02.091en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume73-4en_US
dc.citation.issueen_US
dc.citation.spage594en_US
dc.citation.epage598en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000222145400105-
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