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dc.contributor.authorChen, HYen_US
dc.contributor.authorChen, KMen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorHuang, TYen_US
dc.date.accessioned2014-12-08T15:39:17Z-
dc.date.available2014-12-08T15:39:17Z-
dc.date.issued2004-05-01en_US
dc.identifier.issn0916-8524en_US
dc.identifier.urihttp://hdl.handle.net/11536/26837-
dc.description.abstractIn this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.en_US
dc.language.isoen_USen_US
dc.subjectthreshold voltageen_US
dc.subjecteffective channel lengthen_US
dc.subjectchannel mobilityen_US
dc.subjectS-parameteren_US
dc.subjectautomatic measurementen_US
dc.titleA new method to extract MOSFET threshold voltage, effective channel length, and channel mobility using S-parameter measurementen_US
dc.typeArticleen_US
dc.identifier.journalIEICE TRANSACTIONS ON ELECTRONICSen_US
dc.citation.volumeE87Cen_US
dc.citation.issue5en_US
dc.citation.spage726en_US
dc.citation.epage732en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000221445300013-
dc.citation.woscount0-
Appears in Collections:Articles