標題: 3D Device Simulation of Work Function and Interface Trap Fluctuations on High-kappa/Metal Gate Devices
作者: Cheng, Hui-Wen
Li, Fu-Hai
Han, Ming-Hung
Yiu, Chun-Yen
Yu, Chia-Hui
Lee, Kuo-Fu
Li, Yiming
傳播研究所
Institute of Communication Studies
公開日期: 2010
摘要: This work, for the first time, examines the work function fluctuation (WKF) and interface trap fluctuation (ITF) using experimentally calibrated 3D device simulation on high-kappa / metal gate technology. The random WKs result in 36.7 mV threshold voltage fluctuation (sigma V(th)) for 16 nm N-MOSFETs with TiN gate, which is rather different from the result of averaged WKF (AWKF) method [1] due to localized random WK effect. The ITF affects the subthreshold region (the normalized sigma I(D) > 48%) and is suppressed for devices under strong inversion. Estimation of statistical covariance confirms the dependence of IT on the metal gate's WK; thus, the impacts of WKF and ITF on device and circuit variability should be considered together properly. Such variability induced static noise margin fluctuation of SRAM exceeds the influence of random dopants and cannot be ignored.
URI: http://hdl.handle.net/11536/26843
ISBN: 978-1-4244-7419-6
期刊: 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST
Appears in Collections:Conferences Paper