標題: High-density RF MIM capacitors using high-k La2O3 dielectrics
作者: Yang, MY
Yu, DS
Chin, A
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: The integrity of the metal-insulator-metal (MM) capacitor with high-k La2O3 dielectrics formed using a 400degreesC back-end process was investigated. A very high capacitance per unit area of 9.2 fF/mum(2) was achieved for La2O3 MIM capacitors at 1 MHz, significantly reducing the chip size of radio frequency (rf) circuits. A mathematical derivation, involving measured S parameters, yielded the small voltage-dependent capacitance (DeltaC/C) less than or equal to 100 ppm at 1 GHz, indicating that the precision capacitor circuit can be applied in the rf regime. Furthermore, such a high capacitance density can be maintained as the frequency is increased from 10 KHz to 20 GHz with a large Q factor greater than or equal to90. (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11536/27241
http://dx.doi.org/10.1149/1.1752935
ISSN: 0013-4651
DOI: 10.1149/1.1752935
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 151
Issue: 7
起始頁: F162
結束頁: F165
Appears in Collections:Articles


Files in This Item:

  1. 000222676300058.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.