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dc.contributor.authorChang, KMen_US
dc.contributor.authorYou, KSen_US
dc.contributor.authorLin, JHen_US
dc.contributor.authorSheu, JTen_US
dc.date.accessioned2014-12-08T15:39:57Z-
dc.date.available2014-12-08T15:39:57Z-
dc.date.issued2004en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/27306-
dc.identifier.urihttp://dx.doi.org/10.1149/1.1795254en_US
dc.description.abstractSilicon nanowire fabrication of nanoscale dimensions on a single-crystal silicon surface by scanning probe lithography (SPL) and potassium hydroxide (KOH) aqueous wet etching system has proven to be adequate technological processes. Using SPL directly to define patterns on a single-crystal silicon surface showed that the linewidth of similar to50 nm can be further shrunk to similar to20 nm with KOH wet etching and orientation-dependent etching (ODE) processes on (110)-oriented silicon samples. In addition, this lithography technique also showed a great ability to define patterns on fluorocarbon mask layers. This method performed the fine linewidth of silicon nanowires around 20 nm by operating with lower applied voltages and higher scanning speeds (shorter exposure time) with SPL and ODE techniques and KOH wet etching on (100)-oriented silicon samples. These alternative processes provide the capability to fabricate nanoscale structures with high reliability and repeatablility for applications in the nanofields. (C) 2004 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleAn alternative process for silicon nanowire fabrication with SPL and wet etching systemen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1795254en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume151en_US
dc.citation.issue10en_US
dc.citation.spageG679en_US
dc.citation.epageG682en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000224678500070-
dc.citation.woscount3-
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