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dc.contributor.authorLiu, PTen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorTsai, TMen_US
dc.contributor.authorLin, ZWen_US
dc.contributor.authorChen, CWen_US
dc.contributor.authorChen, BCen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:40:06Z-
dc.date.available2014-12-08T15:40:06Z-
dc.date.issued2003-11-17en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1628401en_US
dc.identifier.urihttp://hdl.handle.net/11536/27388-
dc.description.abstractA direct patterning technology of low-permittivity silicate-based polymer is investigated with electron-beam lithography for multilevel interconnections. The smallest feature size of 60 nm for damascene lines can be directly patterned in the silicate film. In this direct patterning, dielectric regions exposed by electron beam are crosslinked and form desirable patterns, while the others are dissolvable in an aqueous solution containing 2.38% tetramethylammonium hydroxide. With an optimum condition of electron-beam lithography, the electron-beam-irradiated silicate exhibits superior dielectric properties than that of the furnace-cured silicate film, due to minimizing the break of Si-H bonds and moisture uptake. The explanation is in agreement with the analyses of Fourier transform infrared spectroscopy and thermal desorption spectroscopy. (C) 2003 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleDielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1628401en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume83en_US
dc.citation.issue20en_US
dc.citation.spage4226en_US
dc.citation.epage4228en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000186523400049-
dc.citation.woscount5-
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