標題: Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes
作者: Hsu, CY
Lan, WH
Wu, YS
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 22-九月-2003
摘要: The effect of thermal annealing on current-voltage properties of GaN light emitting diodes (LEDs) has been studied. At annealing temperatures above 700 degreesC, the p-n junction of the diodes became very leaky and Ga-contained metallic bubbles were observed on the surface of Ni/Au p-ohmic contact. Transmission electron microscopy and energy dispersive x-ray spectrometer studies revealed that these metallic bubbles resided directly on top of the threading dislocations in GaN and both Ni and Au were indiffused into the LED structure along the cores of the TDs. The conducting paths formed by the metal containing dislocation cores are believed to be the cause for the observed short circuit behavior of p-n junctions at high annealing temperatures. (C) 2003 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1601306
http://hdl.handle.net/11536/27523
ISSN: 0003-6951
DOI: 10.1063/1.1601306
期刊: APPLIED PHYSICS LETTERS
Volume: 83
Issue: 12
起始頁: 2447
結束頁: 2449
顯示於類別:期刊論文


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