A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE

Title:	A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE
Authors:	LIN, KC HSIN, YM CHANG, CY CHANG, EY 材料科學與工程學系電控工程研究所 Department of Materials Science and Engineering Institute of Electrical and Control Engineering
Issue Date:	1-Dec-1993
Abstract:	A high band-gap GaInP epitaxial material was grown on InP to increase the Schottky barrier height of the InP MESFET. The Schottky gate materials used in this study were Au and Pt,Si. The pseudomorphic GaInP/InP MESFET with Au gate has a Schottky barrier height of 0.54 eV and the reverse leakage current of the device is 10(-2) times lower than the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET were 66.7 and 104.2 mS/mm respectively for the 5 mu m gate length GaInP/InP MESFET.
URI:	http://dx.doi.org/10.1109/16.249488 http://hdl.handle.net/11536/2753
ISSN:	0018-9383
DOI:	10.1109/16.249488
Journal:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	40
Issue:	12
Begin Page:	2361
End Page:	2362
Appears in Collections:	Articles

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