標題: High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory
作者: Chien, CH
Wang, DY
Yang, MJ
Lehnen, P
Leu, CC
Chuang, SH
Huang, TY
Chang, CY
交大名義發表
National Chiao Tung University
關鍵字: ferroelectric;hafnium oxide;memory window;metal-ferroelecttic-insulator-semiconductor (MFIS);SrBi2Ta2O9
公開日期: 1-九月-2003
摘要: Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 390-nm-thick SrBi2Ta2O9 (SBT) ferroelectric film and 8-nm-thick hafnium. oxide (HfO2) layer on silicon substrate have been fabricated and characterized. It is demonstrated for the first time that the MFIS stack exhibits a large memory window of around 1.08 V at an operation voltage of 3.5 V. Moreover, the MFIS memory structure suffers only 18% degradation in the memory window after 10(9) switching cycles. The excellent performance is attributed to the formation of well-crystallized SBT perovskite thin film on top of the HfO2 buffer layer, as evidenced by the distinctive sharp peaks in X-ray diffraction (XRD) spectra. In addition to its relatively high kappa value, HfO2 also serves as a good seed layer for SBT crystallization, making the proposed Pt/SrBi2Ta2O9/HfO2/Si structure ideally suitable for low-voltage and high-performance ferroelectric memories.
URI: http://dx.doi.org/10.1109/LED.2003.816582
http://hdl.handle.net/11536/27570
ISSN: 0741-3106
DOI: 10.1109/LED.2003.816582
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 9
起始頁: 553
結束頁: 555
顯示於類別:期刊論文


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