| 標題: | Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs |
| 作者: | Liu, TA Tani, M Nakajima, M Hangyo, M Pan, CL 光電工程學系 Department of Photonics |
| 公開日期: | 18-Aug-2003 |
| 摘要: | The photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs are demonstrated to have a useful bandwidth beyond 20 THz for a gating laser pulse width of 15 fs. The bandwidth and signal-to-noise ratio are compared with those of reference photoconductive antennas based on low-temperature grown GaAs. (C) 2003 American Institute of Physics. |
| URI: | http://dx.doi.org/10.1063/1.1604191 http://hdl.handle.net/11536/27630 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.1604191 |
| 期刊: | APPLIED PHYSICS LETTERS |
| Volume: | 83 |
| Issue: | 7 |
| 起始頁: | 1322 |
| 結束頁: | 1324 |
| Appears in Collections: | Articles |
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- THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas / Liu, TA;Tani, M;Pan, CL
- Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas / Liu, T. -A.;Chou, R. -H.;Pan, C. -L.
- THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs / Liu, TA;Tani, M;Lin, GR;Pan, CL
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