Title: | Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric |
Authors: | Chang, KM Yang, WC Tsai, CP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | N2O-plasma oxynitride;stack oxide;thin film transistors (TFTs) |
Issue Date: | 1-Aug-2003 |
Abstract: | This investigation is the first to demonstrate a novel tetraethylorthosilicate. (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si (LTPS) thin film transistors (TFTs), composed, of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by. PECVD N2O-plasma. The stack oxide shows a very high electrical breakdown field of 8.4 MV/cm, which is approximately 3 MV/cm larger than traditional PECVD TEOS oxide. The field effective mobility of stack oxide UPS TFTs is over 4 times than that of traditional TEOS oxide UPS TFTs. these. improvements are attributed to the high quality N2O-plasma grown ultrathin oxynitride forming strong Si drop N bonds, as well as to reduce the trap density in the dxynitride/poly-Si interface. |
URI: | http://dx.doi.org/10.1109/LED.2003.815155 http://hdl.handle.net/11536/27668 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2003.815155 |
Journal: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 24 |
Issue: | 8 |
Begin Page: | 512 |
End Page: | 514 |
Appears in Collections: | Articles |
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