標題: Structure and electrical studies of fluorinated amorphous carbon films prepared by electron cyclotron resonance/chemical-vapor deposition
作者: Huang, KP
Lin, P
Shih, HC
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: a-C : F;films;ECR-CVD;dielectric;conductivity;bonding
公開日期: 1-Jun-2003
摘要: Fluorinated amorphous carbon (a-C:F) films of high fluorine content were prepared by radio-frequency (RF) bias assisted electron cyclotron resonance/chemical-vapor deposition (ECR-CVD) with a variable fluorine-to-carbon (F/C) ratio of the feed gases. The films were characterized by X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS) and transmission electron microscopy (TEM). A low dielectric constant of around 1.5 and high dielectric strength beyond 35 MV/cm were obtained under the as-deposited and annealed conditions, respectively. The measured huge current surge and electrical conductivity of the films were discussed on the basis of the nanovoids and sp(2)/Sp(3) bonding fractions as derived from the above characterizations. [DOI: 10.1143/JJAP.42.3598].
URI: http://dx.doi.org/10.1143/JJAP.42.3598
http://hdl.handle.net/11536/27814
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.3598
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 6A
起始頁: 3598
結束頁: 3602
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