標題: | Structure and electrical studies of fluorinated amorphous carbon films prepared by electron cyclotron resonance/chemical-vapor deposition |
作者: | Huang, KP Lin, P Shih, HC 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | a-C : F;films;ECR-CVD;dielectric;conductivity;bonding |
公開日期: | 1-六月-2003 |
摘要: | Fluorinated amorphous carbon (a-C:F) films of high fluorine content were prepared by radio-frequency (RF) bias assisted electron cyclotron resonance/chemical-vapor deposition (ECR-CVD) with a variable fluorine-to-carbon (F/C) ratio of the feed gases. The films were characterized by X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS) and transmission electron microscopy (TEM). A low dielectric constant of around 1.5 and high dielectric strength beyond 35 MV/cm were obtained under the as-deposited and annealed conditions, respectively. The measured huge current surge and electrical conductivity of the films were discussed on the basis of the nanovoids and sp(2)/Sp(3) bonding fractions as derived from the above characterizations. [DOI: 10.1143/JJAP.42.3598]. |
URI: | http://dx.doi.org/10.1143/JJAP.42.3598 http://hdl.handle.net/11536/27814 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.42.3598 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 42 |
Issue: | 6A |
起始頁: | 3598 |
結束頁: | 3602 |
顯示於類別: | 期刊論文 |