New high-speed low-power current-mode CMOS sense amplifier

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DC 欄位	值	語言
dc.contributor.author	Wang, SM	en_US
dc.contributor.author	Wu, CY	en_US
dc.date.accessioned	2014-12-08T15:40:57Z	-
dc.date.available	2014-12-08T15:40:57Z	-
dc.date.issued	2003-05-01	en_US
dc.identifier.issn	0253-3839	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27908	-
dc.description.abstract	A novel low-power current-mode sense amplifier for fast CMOS SRAM applications is presented. It is based on the current mode approach. The sensing speed is independent of the bit-line and data-line capacitances and a separated positive feedback technique is employed to give the circuit high-speed, low-power operation. Based on the new current-mode sense amplifier, a 32Kx8 SRAM chip was designed and fabricated. The access time is 9ns at a supply voltage of 3V and the active current is 28mA at 100MHz.	en_US
dc.language.iso	en_US	en_US
dc.subject	current-mode	en_US
dc.subject	sense amplifier	en_US
dc.subject	SRAM	en_US
dc.subject	positive feedback	en_US
dc.title	New high-speed low-power current-mode CMOS sense amplifier	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE CHINESE INSTITUTE OF ENGINEERS	en_US
dc.citation.volume	26	en_US
dc.citation.issue	3	en_US
dc.citation.spage	367	en_US
dc.citation.epage	370	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000183065300012	-
dc.citation.woscount	0	-
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