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dc.contributor.authorYang, MYen_US
dc.contributor.authorHuang, CHen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorZhu, CXen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorKwong, DLen_US
dc.date.accessioned2014-12-08T15:40:57Z-
dc.date.available2014-12-08T15:40:57Z-
dc.date.issued2003-05-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2003.812572en_US
dc.identifier.urihttp://hdl.handle.net/11536/27913-
dc.description.abstractThe authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.en_US
dc.language.isoen_USen_US
dc.subjectcapacitoren_US
dc.subjectdielectric constanten_US
dc.subjectfrequency drpendenceen_US
dc.subjecthigh kappaen_US
dc.subjectMIMen_US
dc.subjectRFen_US
dc.titleHigh-density MIM canpacitors using AlTaOx dielectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2003.812572en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume24en_US
dc.citation.issue5en_US
dc.citation.spage306en_US
dc.citation.epage308en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000184064600007-
dc.citation.woscount15-
Appears in Collections:Articles


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