High-density MIM canpacitors using AlTaOx dielectrics

doi:10.1109/LED.2003.812572

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, MY	en_US
dc.contributor.author	Huang, CH	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Zhu, CX	en_US
dc.contributor.author	Li, MF	en_US
dc.contributor.author	Kwong, DL	en_US
dc.date.accessioned	2014-12-08T15:40:57Z	-
dc.date.available	2014-12-08T15:40:57Z	-
dc.date.issued	2003-05-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2003.812572	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27913	-
dc.description.abstract	The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.	en_US
dc.language.iso	en_US	en_US
dc.subject	capacitor	en_US
dc.subject	dielectric constant	en_US
dc.subject	frequency drpendence	en_US
dc.subject	high kappa	en_US
dc.subject	MIM	en_US
dc.subject	RF	en_US
dc.title	High-density MIM canpacitors using AlTaOx dielectrics	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2003.812572	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	24	en_US
dc.citation.issue	5	en_US
dc.citation.spage	306	en_US
dc.citation.epage	308	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000184064600007	-
dc.citation.woscount	15	-
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