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dc.contributor.authorTsui, BYen_US
dc.contributor.authorChen, CWen_US
dc.contributor.authorHuang, SMen_US
dc.contributor.authorLin, SSen_US
dc.date.accessioned2014-12-08T15:40:58Z-
dc.date.available2014-12-08T15:40:58Z-
dc.date.issued2003-05-01en_US
dc.identifier.issn0894-6507en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TSM.2003.811887en_US
dc.identifier.urihttp://hdl.handle.net/11536/27922-
dc.description.abstractSacrificial layer (SACL) coating had been proposed to protect the sealing layer of underlying copper lines during trench etching as via-first scheme is employed for dual-damascene patterning. Because the coated SACL thickness depends on via size and via density, the process window is hard to identify. In this paper, the criteria for a successful SACL process are derived. A four-step procedure for SACL process developing is also proposed. It is suggested that shallow trench depth and medium etch rate selectivity between inter-metal-dielectric and SACL material are preferred. The SACL thickness in via can be adjusted by adjusting the overetching percentage at the SACL breakthrough step so that the criteria are satisfied. The validity of the proposed criteria is proved by the very high yield of via chains with via size ranging from 0.27 to 0.16 mum. It is concluded that the SACL process can be robust and can be employed to reduce the thickness of the capping layer effectively even beyond the 0.13-mum technology node.en_US
dc.language.isoen_USen_US
dc.subjectcopperen_US
dc.subjectdual-damasceneen_US
dc.subjectinterconnectionsen_US
dc.titleProcess sensitivity and robustness analysis of via-first dual-damascene processen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TSM.2003.811887en_US
dc.identifier.journalIEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURINGen_US
dc.citation.volume16en_US
dc.citation.issue2en_US
dc.citation.spage307en_US
dc.citation.epage313en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000182749500031-
dc.citation.woscount1-
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