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dc.contributor.authorWu, HRen_US
dc.contributor.authorLee, KWen_US
dc.contributor.authorNian, TBen_US
dc.contributor.authorChou, DWen_US
dc.contributor.authorWu, JJHen_US
dc.contributor.authorWang, YHen_US
dc.contributor.authorHoung, MPen_US
dc.contributor.authorSze, PWen_US
dc.contributor.authorSu, YKen_US
dc.contributor.authorChang, SJen_US
dc.contributor.authorHo, CHen_US
dc.contributor.authorChiang, CIen_US
dc.contributor.authorChern, YTen_US
dc.contributor.authorJuang, FSen_US
dc.contributor.authorWen, TCen_US
dc.contributor.authorLee, WIen_US
dc.contributor.authorChyi, JIen_US
dc.date.accessioned2014-12-08T15:41:01Z-
dc.date.available2014-12-08T15:41:01Z-
dc.date.issued2003-04-29en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0254-0584(02)00504-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/27946-
dc.description.abstractAn efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized. (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectliquid phase depositionen_US
dc.subjectsilicon dioxideen_US
dc.titleLiquid phase deposited SiO2 on GaNen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0254-0584(02)00504-7en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume80en_US
dc.citation.issue1en_US
dc.citation.spage329en_US
dc.citation.epage333en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000181736200052-
dc.citation.woscount18-
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