标题: | Growth temperature reduction for isoelectronic As-doped GaN |
作者: | Lee, WH Huang, HY Chen, WC Lee, CF Chen, WK Chen, WH Lee, MC 电子物理学系 Department of Electrophysics |
关键字: | GaN;isoelectronic As-doping;Raman scattering;spatial correlation length;photoluminescence;Hall mobility |
公开日期: | 1-三月-2003 |
摘要: | As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping. |
URI: | http://dx.doi.org/10.1143/JJAP.42.L239 http://hdl.handle.net/11536/28077 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.42.L239 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 42 |
Issue: | 3A |
起始页: | L239 |
结束页: | L242 |
显示于类别: | Articles |
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