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dc.contributor.authorWU, SLen_US
dc.contributor.authorLEE, CLen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorCHANG, HCen_US
dc.date.accessioned2014-12-08T15:04:19Z-
dc.date.available2014-12-08T15:04:19Z-
dc.date.issued1993-10-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.277336en_US
dc.identifier.urihttp://hdl.handle.net/11536/2823-
dc.description.abstractA high-performance shallow junction diode formed with a stacked-amorphous-silicon (SAS) film is presented. Since the boundaries of stacked silicon layers and the poly/mono silicon interface act as a diffusion barrier for implanted dopants, the junction depth of SAS emitter contacted diode is about 500 angstrom shallower than that of the as-deposited polysilicon (ADP) emitter contacted diode. The fabricated SAS emitter contacted diodes exhibited a very low reverse leakage current (less-than-or-equal-to 1 nA/cm2 at -5 V) and a forward.ideality factor m almost-equal-to 1.001 over 7 decades on a log scale. The reverse I-V characteristics were found to be nearly independent of the reverse voltage from the room temperature to 200-degrees-C, and it was also found that the leakage current was due almost completely to the diffusion current. The plots of the diode leakage current versus the perimeter to area ratio showed that the periphery generation current only contributed a small portion to the total leakage. The processing temperature for the SAS emitter contacted p+-n diode can be as low as 600-degrees-C.en_US
dc.language.isoen_USen_US
dc.titleCHARACTERISTICS OF POLYSILICON CONTACTED SHALLOW JUNCTION DIODE FORMED WITH A STACKED-AMORPHOUS-SILICON FILMen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.277336en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume40en_US
dc.citation.issue10en_US
dc.citation.spage1797en_US
dc.citation.epage1804en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1993MA76600012-
dc.citation.woscount9-
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