完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chou, KY | en_US |
dc.contributor.author | Chen, MJ | en_US |
dc.contributor.author | Liu, CW | en_US |
dc.date.accessioned | 2014-12-08T15:41:43Z | - |
dc.date.available | 2014-12-08T15:41:43Z | - |
dc.date.issued | 2002-12-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2002.807452 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28365 | - |
dc.description.abstract | Active devices, including electrostatic discharge protection devices and ring-oscillator circuits, under CMOS I/O pads are investigated in a 130 nm full eight-level copper metal complementary metal-oxide-semiconductoir process, using fluorinated silicate glass (FSG) low-k inter-metal dielectric. The high current I-V curve measured in the second breakdown trigger point (V-t2, I-t2) of ESD protection devices under various metal level stack structures, shows that i) I-t2 depends very weakly on the number of metal levels used, as expected given specific junction power dissipation criteria; and ii) V-t2 increases with the number of metal level stacks of I/O pads because of increased dynamic impedance due to the presence of more metal levels, as clarified by a simple RC model. Moreover, no noticeable degradation in the speed of the ring-oscillator circuit, as measured for a variety of test structures subjected to bonding mechanical stress, thermal stress by temperature cycling and dc electrical stress by transmission line pulse, as well as ac electrical stress by capacitive-coupling experiments. Accordingly, active devices under CMOS I/O pads is independent of bonding pad metal level structures. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | CMOS | en_US |
dc.subject | copper | en_US |
dc.subject | ESD | en_US |
dc.subject | FSG | en_US |
dc.subject | IMD | en_US |
dc.subject | I/O bonding pad | en_US |
dc.subject | low-k | en_US |
dc.subject | propagation gate delay | en_US |
dc.subject | ring-oscillator | en_US |
dc.subject | second breakdown trigger point | en_US |
dc.subject | SOC | en_US |
dc.subject | transmission line pulse | en_US |
dc.title | Active devices under CMOS I/O pads | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2002.807452 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 49 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 2279 | en_US |
dc.citation.epage | 2287 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000180982000023 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |