A NOVEL PHL-EMITTER BIPOLAR-TRANSISTOR - FABRICATION AND CHARACTERIZATION

Abstract

The polysilicon high-low-emitter (PHL-emitter) bipolar transistors have been fabricated and characterized. It is shown that the fabricated PHL-emitter bipolar transistors exhibit higher maximum current pin with lower activation energy, higher emitter-base breakdown, and better hot-carrier reliability than those of the fabricated conventional bipolar transistor. However, a little degradation in cutoff frequency for the fabricated PHL-emitter bipolar transistors due to the presence of the high-low emitter junction has also been observed. The effects of the n- implant dose on the electrical characteristics of the fabricated PHL-emitter bipolar transistors have been examined and discussed.