標題: A NOVEL PHL-EMITTER BIPOLAR-TRANSISTOR - FABRICATION AND CHARACTERIZATION
作者: CHANG, KZ
WU, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-1993
摘要: The polysilicon high-low-emitter (PHL-emitter) bipolar transistors have been fabricated and characterized. It is shown that the fabricated PHL-emitter bipolar transistors exhibit higher maximum current pin with lower activation energy, higher emitter-base breakdown, and better hot-carrier reliability than those of the fabricated conventional bipolar transistor. However, a little degradation in cutoff frequency for the fabricated PHL-emitter bipolar transistors due to the presence of the high-low emitter junction has also been observed. The effects of the n- implant dose on the electrical characteristics of the fabricated PHL-emitter bipolar transistors have been examined and discussed.
URI: http://dx.doi.org/10.1016/0038-1101(93)90048-U
http://hdl.handle.net/11536/2838
ISSN: 0038-1101
DOI: 10.1016/0038-1101(93)90048-U
期刊: SOLID-STATE ELECTRONICS
Volume: 36
Issue: 10
起始頁: 1393
結束頁: 1399
顯示於類別:期刊論文