標題: | Design and analysis of on-chip ESD protection circuit with very low input capacitance for high-precision analog applications |
作者: | Ker, MD Chen, TY Wu, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | electrostatic discharge (ESD);ESD protection circuit;input capacitance;analog pin |
公開日期: | 1-Sep-2002 |
摘要: | An ESD protection design is proposed to solve the ESD protection challenge to the analog pins for high-frequency or current-mode applications. By including an efficient power-rails clamp circuit into the analog I/O pin, the device dimension (W/L) of ESD clamp device connected to the I/O pad in the analog ESD protection circuit can be reduced to only 50/0.5 (mum/mum) in a 0.35-mum silicided CMOS process, but it can sustain the human-body-model (machine-model) ESD level of up to 6 kV (400 V). With such a smaller device dimension, the input capacitance of this analog ESD protection circuit can be significantly reduced to only similar to1.0 pF (including the bond pad capacitance) for high-frequency applications. A design model to find the optimized layout dimensions and spacings on the input ESD clamp devices has been also developed to keep the total input capacitance almost constant (within 1% variation), even if the analog input signal has a dynamic range of 1 V. |
URI: | http://dx.doi.org/10.1023/A:1020351709833 http://hdl.handle.net/11536/28544 |
ISSN: | 0925-1030 |
DOI: | 10.1023/A:1020351709833 |
期刊: | ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING |
Volume: | 32 |
Issue: | 3 |
起始頁: | 257 |
結束頁: | 278 |
Appears in Collections: | Conferences Paper |
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