A NEW 2D ANALYTIC THRESHOLD-VOLTAGE MODEL FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS

doi:10.1109/16.231571

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	GUO, JY	en_US
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:04:22Z	-
dc.date.available	2014-12-08T15:04:22Z	-
dc.date.issued	1993-09-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.231571	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2868	-
dc.description.abstract	The exact solution of the 2D Poisson's equation for the fully depleted SOI MOSFET's is derived by using a three-zone Green's function solution technique. Based on the derived 2D potential distribution, the front and back surface potential distributions in the Si film are analytically obtained and their accuracy are verified by 2D numerical analysis. The calculated minimum surface potential and its location are used to analyze the drain-induced barrier-lowering effect and further to develop an analytic threshold-voltage model. Comparisons between the developed analytic threshold-voltage model and the 2D numerical analysis are made. It is shown that excellent agreements are obtained for wide ranges of device structure parameters and applied biases.	en_US
dc.language.iso	en_US	en_US
dc.title	A NEW 2D ANALYTIC THRESHOLD-VOLTAGE MODEL FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.231571	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	40	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1653	en_US
dc.citation.epage	1661	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1993LU39400012	-
dc.citation.woscount	26	-
顯示於類別：	期刊論文

文件中的檔案：

A1993LU39400012.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。