A NEW APPROACH TO DETERMINE THE DRAIN-AND-SOURCE SERIES RESISTANCE OF LDD MOSFETS

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DC 欄位	值	語言
dc.contributor.author	CHUNG, SSS	en_US
dc.contributor.author	LEE, JS	en_US
dc.date.accessioned	2014-12-08T15:04:22Z	-
dc.date.available	2014-12-08T15:04:22Z	-
dc.date.issued	1993-09-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.231580	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2869	-
dc.description.abstract	A new method for determining the intrinsic drain-and-source series resistance and the effective channel length of LDD MOSFET's is proposed. The method is based on the experimentally measured device I-V characteristics and a new parameter extraction procedure. A consistent set of the effective channel length and the gate-voltage-dependent drain-and-source series resistance was thus determined. The comparison between the measured and experimental drain current characteristics shows excellent agreement using the present model values.	en_US
dc.language.iso	en_US	en_US
dc.title	A NEW APPROACH TO DETERMINE THE DRAIN-AND-SOURCE SERIES RESISTANCE OF LDD MOSFETS	en_US
dc.type	Note	en_US
dc.identifier.doi	10.1109/16.231580	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	40	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1709	en_US
dc.citation.epage	1711	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993LU39400021	-
dc.citation.woscount	25	-
顯示於類別：	期刊論文

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