標題: | Silicon nanostructures fabricated by scanning probe oxidation and tetra-methyl ammonium hydroxide etching |
作者: | Chien, FSS Hsieh, WF Gwo, S Vladar, AE Dagata, JA 光電工程學系 Department of Photonics |
公開日期: | 15-Jun-2002 |
摘要: | Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrated that the process of scanning probe microscope (SPM) oxidation and anisotropic tetra-methyl ammonium hydroxide (TMAH) etching is a low-cost and reliable method to produce smooth and uniform silicon nanostructures on a variety of silicon substrates. Etched structures with a pitch of 100 nm, positive- and negative-contrast structures, and features height greater than 100 nm have been produced on bare silicon, and Si3N4-coated and silicon-on-insulator wafers. Evolution of hexagonal pits on two-dimensional grid structures were shown to depend on the pattern spacing and orientation with respect to Si(110) crystal directions. We successfully combined SPM oxidation with traditional optical lithography in a mixed, multilevel patterning method for realizing micrometer-and nanometer-scale feature sizes, as required for photonic device designs. The combination of SPM oxidation and TMAH etching is a promising approach to rapid prototyping of functional nano-photonic devices. (C) 2002 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1476072 http://hdl.handle.net/11536/28718 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.1476072 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 91 |
Issue: | 12 |
起始頁: | 10044 |
結束頁: | 10050 |
Appears in Collections: | Articles |
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