標題: | Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films |
作者: | Tsai, CC Chang, CS Chen, TY 光電工程學系 Department of Photonics |
公開日期: | 20-五月-2002 |
摘要: | In this study, GaN substrates with low-density etch pits were obtained by regrowth on free-standing GaN films (two steps) by hydride vapor-phase epitaxy (HVPE). The etch-pit density was lower than 4x10(4) cm(-2) by atomic-force microscopy. The density is significantly lower than that of the HVPE-grown (one-step) GaN films (HVPE GaN), using sapphire as a substrate. The optical and electrical properties of the two-step HVPE-grown GaN substrates are superior to those of HVPE GaN. Temperature-dependent photoluminescence measurements reveal that thermal quenching behavior of the 2.9 eV band is possibly attributed to a shallow acceptor level at about 118+/-5 meV above the valence band. (C) 2002 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1480108 http://hdl.handle.net/11536/28783 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.1480108 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 80 |
Issue: | 20 |
起始頁: | 3718 |
結束頁: | 3720 |
顯示於類別: | 期刊論文 |