標題: RF CMOS technology for MMIC
作者: Chang, CY
Su, JG
Wong, SC
Huang, TY
Sun, YC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-四月-2002
摘要: This paper presents a high performance RF CMOS technology with a complete portfolio of RF and base band components for single-chip systems. Using an optimized 0.13 mum CMOS topology, f(T) of 86 GHz and f(max) of 73 GHz are obtained, in addition to a NFmin of 1.5 dB without ground-shielded signal pad. The high-Q accumulation-mode and diode varactors are optimized to perform a high tuning range of 47% and 25%, respectively. Inductors with a quality factor of 18 at 1.7 nH are obtained using copper interconnect, while capacitors with high unit capacitance and quality factor are fabricated with metal-insulator-metal structures. Finally, a deep n-well isolation is adopted to suppress the interblock coupling noise penetrating through substrate by 40 and 25 dB at 0.1 and 2.4 GHz, respectively. These results clearly demonstrate that CMOS technology can provide a complete solution for single-chip wireless systems. (C) 2002 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0026-2714(02)00006-9
http://hdl.handle.net/11536/28891
ISSN: 0026-2714
DOI: 10.1016/S0026-2714(02)00006-9
期刊: MICROELECTRONICS RELIABILITY
Volume: 42
Issue: 4-5
起始頁: 721
結束頁: 733
顯示於類別:期刊論文


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