Title: Ambipolar Schottky-barrier TFTs
Authors: Lin, HC
Yeh, KL
Huang, TY
Huang, RG
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: ambipolar;field-induced drain;Schottky barrier;TFT
Issue Date: 1-Feb-2002
Abstract: A novel Schottky-barrier metal-oxide-semiconductor thin-film transistor (SBTFT) was successfully demonstrated and characterized. The new SBTFT device features a fleld-induced-drain (FID) region, which is controlled by a metal field-plate lying on top of the passivation oxide. The FED region is sandwiched between the silicided drain and the active channel region. Carrier types and the conductivity of the transistor are controlled by the metal field-plate. The device is thus capable of ambipolar operation. Excellent ambipolar performance with on/off current ratios over 10(6) for both p- and n-channel operations was realized simultaneously on the same device fabricated with polysilicon active layer. Moreover, the off-state leakage current shows very weak dependence on the gate-to-drain voltage difference with the FID structure. Finally, the effects of FED length are explored.
URI: http://dx.doi.org/10.1109/16.981216
http://hdl.handle.net/11536/29022
ISSN: 0018-9383
DOI: 10.1109/16.981216
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 49
Issue: 2
Begin Page: 264
End Page: 270
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