標題: Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot
作者: Li, YM
Liu, JL
Voskoboynikov, O
Lee, CP
Sze, SM
應用數學系
電子工程學系及電子研究所
Department of Applied Mathematics
Department of Electronics Engineering and Institute of Electronics
關鍵字: III-V semiconductor;cylindrical quantum dot;electronic structure;electron states;computer simulation;calculation methods
公開日期: 1-Nov-2001
摘要: Three computational techniques are presented for approximation of the ground state energy and wave function of an electron confined by a disk-shaped InAs quantum dot (QD) embedded in GaAs matrix. The problem is treated with the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and the Ben-Daniel Duke boundary conditions. To solve the three dimensional (3D) Schrodinger equation, we employ (i) the adiabatic approximation, (ii) the adiabatic approximation with averaging, and (iii) full numerical solution. It is shown that the more efficient approximations (i) and (ii) can only be used for relatively large QD sizes. The full numerical method gives qualitative as well as quantitative trends in electronic properties with various parameters. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0010-4655(01)00291-0
http://hdl.handle.net/11536/29308
ISSN: 0010-4655
DOI: 10.1016/S0010-4655(01)00291-0
期刊: COMPUTER PHYSICS COMMUNICATIONS
Volume: 140
Issue: 3
起始頁: 399
結束頁: 404
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