標題: Thin tunnel oxide grown on silicon substrate pretreated by CF4 plasma
作者: Lee, JW
Lei, TF
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: anomalous current;CF4 fluorinated oxide;low-voltage EEPROM;plasma pretreatment;SILC;tunnel oxide
公開日期: 1-十一月-2001
摘要: High tunneling current and large resistance against stress were the main issue of tunnel oxide for scaling down the operation voltage of EEPROMs. In this letter, thin-tunnel oxides grown on a CF4 pretreated silicon substrate were prepared and investigated for the first time. The fabricated oxide has about three orders of tunneling current higher than that of control one; furthermore, the stress induced anomalous and low electric field leakage currents were greatly suppressed. The improvement could be contributed to F-incorporation in oxide. This type of oxide is suitable for fabricating low-voltage EEPROMs and less process complexity was added.
URI: http://dx.doi.org/10.1109/55.962647
http://hdl.handle.net/11536/29327
ISSN: 0741-3106
DOI: 10.1109/55.962647
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 22
Issue: 11
起始頁: 513
結束頁: 515
顯示於類別:期刊論文


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