標題: ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE
作者: WU, SL
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 5-Jul-1993
摘要: This letter reports a stacked nitride/microcrystalline-silicon/oxide/silicon structure, which exhibits a higher electron injection efficiency, a less electron trapping rate, and a larger charge to breakdown than the normal oxide. Besides, the room-temperature resonant tunneling effect is also observed for this structure.
URI: http://dx.doi.org/10.1063/1.109738
http://hdl.handle.net/11536/2938
ISSN: 0003-6951
DOI: 10.1063/1.109738
期刊: APPLIED PHYSICS LETTERS
Volume: 63
Issue: 1
起始頁: 24
結束頁: 26
Appears in Collections:Articles