標題: An investigation of scanning capacitance microscopy on iron-contaminated p-type silicon
作者: Chang, MN
Chang, TY
Pan, FM
Wu, BW
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-2001
摘要: Scanning capacitance microscopy (SCM) is employed to examine iron-contaminated p-type Si samples. For slightly contaminated samples, a dc voltage of -0.8 V, applied between the sample and the conductive tip, induces positive trapped charges. Owing to the existence of these charges, the region containing trapped charges exhibits an obviously low dC/dV signal. According to contact-mode atomic force microscopy results, the surface, morphology has little effect on the SCM signal. The experimental results indicate that SCM is capable of detecting the distribution of oxidation-related. defects which cannot otherwise be easily observed by atomic force microscopy and transmission electron microscopy. (C) 2001 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1389877
http://hdl.handle.net/11536/29416
ISSN: 1099-0062
DOI: 10.1149/1.1389877
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 4
Issue: 9
起始頁: G69
結束頁: G71
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