標題: | Transport and optical studies of the D--conduction band in doped GaAs/AlGaAs quantum wells |
作者: | Lee, CH Chang, YH Huang, CF Huang, MY Lin, HH Lee, CP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-八月-2001 |
摘要: | The properties of D- ions in quantum wells were studied. It is found that, with an intermediate concentration of D- ions, electrons in the quantum wells possess both band-like and impurity-like properties. The appearance of the Quantum Hall effect makes it possible to rule out the existence of an impurity band that is separated from the conduction band. The results are interpreted in terms of the formation of a D- conduction band, with the D- band becoming a tail of the conduction band. The implications of our experimental results on the metal-insulator transitions in doped semiconductors are discussed. |
URI: | http://hdl.handle.net/11536/29468 |
ISSN: | 0577-9073 |
期刊: | CHINESE JOURNAL OF PHYSICS |
Volume: | 39 |
Issue: | 4 |
起始頁: | 363 |
結束頁: | 368 |
顯示於類別: | 期刊論文 |