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dc.contributor.authorLee, JYen_US
dc.contributor.authorWang, TCen_US
dc.contributor.authorChen, SFen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:43:35Z-
dc.date.available2014-12-08T15:43:35Z-
dc.date.issued2001-08-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/29469-
dc.description.abstractThe effects of the initial surface state on the evolution kinetics of the surface morphology of strontium titanate (STO) films was investigated by in-situ monitoring the intensity variations of reflection high-energy electron diffraction (RHEED). In order to create various surface states prior to subsequent depositions, we intentionally interrupted the pulsed laser deposition (PLD) at various points during the whole deposition course to perform in-situ annealing over various periods of time. The depth of the initial drop of RHEED intensity, which is a direct indication of changes in surface step densities, shows two distinct time scales. The results suggest that the evolution of a growing surface, and hence the ultimate film surface morphology, may be manipulated by controlling the number density of the as-deposited growing islands through interrupted annealing.en_US
dc.language.isoen_USen_US
dc.titleGrowth kinetics of homoepitaxial strontium titanate films by interrupted pulsed laser depositionen_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume39en_US
dc.citation.issue4en_US
dc.citation.spageL299en_US
dc.citation.epageL304en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000170631000002-
dc.citation.woscount3-
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