標題: Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-kappa/metal gate bulk FinFET devices
作者: Li, Yiming
Cheng, Hui-Wen
Yiu, Chun-Yen
Su, Hsin-Wen
傳播研究所
電機工程學系
Institute of Communication Studies
Department of Electrical and Computer Engineering
關鍵字: Metal gate;TiN gate;Random work function;Bulk FinFET;Threshold voltage fluctuation;Random grain's size;Number and position;Large scale 3D device simulation
公開日期: 1-Jul-2011
摘要: In this work, the work function fluctuation (WKF) induced variability in 16-nm-gate bulk N-FinFET is for the first time explored by an experimentally calibrated 3D device simulation. Random nanosized grains of TiN gate are statistically positioned in the gate region to examine the associated carriers' transport, concurrently capturing "grain number variation" and "grain position fluctuation." The newly developed localized WKF simulation method enables us to estimate the threshold voltage fluctuation of devices with respect to the aspect ratio (AR = fin height/fin width) which accounts for the random grain's size, number and position effects simultaneously. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2011.03.037
http://hdl.handle.net/11536/29509
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.03.037
期刊: MICROELECTRONIC ENGINEERING
Volume: 88
Issue: 7
起始頁: 1240
結束頁: 1242
Appears in Collections:Conferences Paper


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