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dc.contributor.authorChen, Yuanen_US
dc.contributor.authorLin, Yu-Weien_US
dc.contributor.authorTsao, Yu-Chien_US
dc.contributor.authorLee, Chen-Yien_US
dc.date.accessioned2014-12-08T15:43:40Z-
dc.date.available2014-12-08T15:43:40Z-
dc.date.issued2008-05-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2008.920320en_US
dc.identifier.urihttp://hdl.handle.net/11536/29532-
dc.description.abstractThis paper presents a new dynamic voltage and frequency scaling (DVFS) FFT processor for MIMO OFDM applications. By the proposed multimode multipath-delay-feedback (MMDF) architecture, our FFT processor can process 1-8-stream 256-point FFTs or a high-speed 256-point FFT in two processing domains at minimum clock frequency for DVFS operations. A parallelized radix-2(4) FFT algorithm is also employed to save the power consumption and hardware cost of complex multipliers. Furthermore, a novel open-loop voltage detection and scaling (OLVDS) mechanism is proposed for fast and robust voltage management. With these schemes, the proposed FFT processor can operate at adequate voltage/frequency under different configurations to support the power-aware feature. A test chip of the proposed FITT processor has been fabricated using UMC 90 nm single-poly nine-metal CMOS process with a core area of 1.88 x 1.88 mm(2). The SQNR performance of this FFT chip is over 35.8 dB for QPSK/16-QAM modulation. Power dissipation of 2.4 Gsample/s 256-point FFT computations is about 119.7 mW at 0.85 V. Depending on the operation mode, power can be saved by 18%-43% with voltage scaling in TT corner.en_US
dc.language.isoen_USen_US
dc.subjectdynamic voltage and frequency scaling (DVFS)en_US
dc.subjectfast Fourier transform (FFT)en_US
dc.subjectmultiple-input multiple-output (MIMO)en_US
dc.subjectorthogonal frequency division multiplexing (OFDM)en_US
dc.titleA 2.4-Gsample/s DVFS FFT processor for MIMO OFDM communication systemsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/JSSC.2008.920320en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume43en_US
dc.citation.issue5en_US
dc.citation.spage1260en_US
dc.citation.epage1273en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000255354300021-
Appears in Collections:Conferences Paper


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