標題: Activation of p-type GaN in a pure oxygen ambient
作者: Wen, TC
Lee, SC
Lee, WI
Chen, TY
Chan, SH
Tsang, JS
電子物理學系
友訊交大聯合研發中心
Department of Electrophysics
D Link NCTU Joint Res Ctr
關鍵字: p-type GaN;activation;rapid thermal annealing;oxygen ambient;nitrogen ambient;Hall measurement;photoluminescence;hydrogen
公開日期: 15-五月-2001
摘要: In this study, we activated p-type GaN in a pure oxygen ambient by rapid thermal annealing. The sheet resistance of p-type GaN was greatly reduced from > 10(7) Omega/square to 7.06 x 10(4) Omega/square after annealing in oxygen ambient at 500 degreesC, The photoluminescence intensity of blue emission increased by one order of magnitude compared to the as-grown sample. Moreover, the sheet resistance of p-type GaN annealed in pure oxygen ambient is lower than that of p-type GaN annealed in nitrogen ambient. The carrier concentrations of the samples annealed in oxygen ambient are higher than those annealed in nitrogen ambient. The better activation of p-type GaN in oxygen ambient is due to the higher activity of oxygen than that of nitrogen. Oxygen would remove hydrogen that passivates Ma atoms by forming H2O at a lower temperature.
URI: http://dx.doi.org/10.1143/JJAP.40.L495
http://hdl.handle.net/11536/29644
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.L495
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 40
Issue: 5B
起始頁: L495
結束頁: L497
顯示於類別:期刊論文


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