標題: | Activation of p-type GaN in a pure oxygen ambient |
作者: | Wen, TC Lee, SC Lee, WI Chen, TY Chan, SH Tsang, JS 電子物理學系 友訊交大聯合研發中心 Department of Electrophysics D Link NCTU Joint Res Ctr |
關鍵字: | p-type GaN;activation;rapid thermal annealing;oxygen ambient;nitrogen ambient;Hall measurement;photoluminescence;hydrogen |
公開日期: | 15-五月-2001 |
摘要: | In this study, we activated p-type GaN in a pure oxygen ambient by rapid thermal annealing. The sheet resistance of p-type GaN was greatly reduced from > 10(7) Omega/square to 7.06 x 10(4) Omega/square after annealing in oxygen ambient at 500 degreesC, The photoluminescence intensity of blue emission increased by one order of magnitude compared to the as-grown sample. Moreover, the sheet resistance of p-type GaN annealed in pure oxygen ambient is lower than that of p-type GaN annealed in nitrogen ambient. The carrier concentrations of the samples annealed in oxygen ambient are higher than those annealed in nitrogen ambient. The better activation of p-type GaN in oxygen ambient is due to the higher activity of oxygen than that of nitrogen. Oxygen would remove hydrogen that passivates Ma atoms by forming H2O at a lower temperature. |
URI: | http://dx.doi.org/10.1143/JJAP.40.L495 http://hdl.handle.net/11536/29644 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.40.L495 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 40 |
Issue: | 5B |
起始頁: | L495 |
結束頁: | L497 |
顯示於類別: | 期刊論文 |