标题: | Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment |
作者: | Pan, TM Lei, TF Wen, HC Chao, TS 电子工程学系及电子研究所 奈米中心 Department of Electronics Engineering and Institute of Electronics Nano Facility Center |
关键字: | N2O;NH3;nitridation;oxynitride;rapid thermal annealing (RTA);Si3N4 |
公开日期: | 1-五月-2001 |
摘要: | In this paper, we developed a new method to grow robust ultrathin oxynitride (E-OT = 18 Angstrom) film with effective dielectric constant of 7.15. By NH3-nitridation of Si substrate, grown ultrathin Si3N4 with N2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing, In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices. |
URI: | http://dx.doi.org/10.1109/16.918238 http://hdl.handle.net/11536/29660 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.918238 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 48 |
Issue: | 5 |
起始页: | 907 |
结束页: | 912 |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.