標題: | Effect of temperature and illumination on the instability of a-Si : H thin-film transistors under AC gate bias stress |
作者: | Huang, CY Teng, TH Yang, CJ Tseng, CH Cheng, HC 奈米中心 Nano Facility Center |
關鍵字: | a-Si : H TFTs;AC;bias-temperature-stress;bias-illumination-stress |
公開日期: | 1-Apr-2001 |
摘要: | This work investigates the temperature and illumination effects on the a-SM thin-film transistors (a-SiH TFTs) under AC gate bias stress to find the larger threshold voltage shift and subthreshold swing change for the bias-temperature-stress (BTS) and bias-illumination-stress (BIS). Excess carriers from thermal-generation electron-hole pairs or photoexcited electron-hole pairs may significantly influence the instability of a-SM TFTs during bias stress. The instability mechanisms originate from the carrier-induced defect Creation enhanced by thermal generation in the BTS case and also emphasized by photoexcitation for the BIS case. Both stress conditions will induce a larger threshold voltage shift and higher cutoff frequency than those for simple bias stresses. |
URI: | http://dx.doi.org/10.1143/JJAP.40.L316 http://hdl.handle.net/11536/29746 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.40.L316 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 40 |
Issue: | 4A |
起始頁: | L316 |
結束頁: | L318 |
Appears in Collections: | Articles |
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