標題: ROLE OF CLADDING LAYER THICKNESSES ON STRAINED-LAYER INGAAS/GAAS SINGLE AND MULTIPLE-QUANTUM-WELL LASERS
作者: LIU, DC
LEE, CP
TSAI, CM
LEI, TF
TSANG, JS
CHIANG, WH
TU, YK
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Jun-1993
摘要: The influences of cladding layer thicknesses on the performance of strained-layer InGaAs/GaAs graded-index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed using the transfer matrix method. In this work, experimental results and the calculated results showed that threshold current densities and external quantum efficiencies both were crucially dependent on the thicknesses of cladding layer for both single and multiple quantum well lasers. The minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal total loss for both single and multiple quantum well devices were determined experimentally and theoretically.
URI: http://dx.doi.org/10.1063/1.353917
http://hdl.handle.net/11536/2980
ISSN: 0021-8979
DOI: 10.1063/1.353917
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 73
Issue: 12
起始頁: 8027
結束頁: 8034
Appears in Collections:Articles