标题: | ROLE OF CLADDING LAYER THICKNESSES ON STRAINED-LAYER INGAAS/GAAS SINGLE AND MULTIPLE-QUANTUM-WELL LASERS |
作者: | LIU, DC LEE, CP TSAI, CM LEI, TF TSANG, JS CHIANG, WH TU, YK 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 15-六月-1993 |
摘要: | The influences of cladding layer thicknesses on the performance of strained-layer InGaAs/GaAs graded-index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed using the transfer matrix method. In this work, experimental results and the calculated results showed that threshold current densities and external quantum efficiencies both were crucially dependent on the thicknesses of cladding layer for both single and multiple quantum well lasers. The minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal total loss for both single and multiple quantum well devices were determined experimentally and theoretically. |
URI: | http://dx.doi.org/10.1063/1.353917 http://hdl.handle.net/11536/2980 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.353917 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 73 |
Issue: | 12 |
起始页: | 8027 |
结束页: | 8034 |
显示于类别: | Articles |