完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ker, MD | en_US |
dc.contributor.author | Chen, TY | en_US |
dc.contributor.author | Wu, CY | en_US |
dc.contributor.author | Chang, HH | en_US |
dc.date.accessioned | 2014-12-08T15:44:57Z | - |
dc.date.available | 2014-12-08T15:44:57Z | - |
dc.date.issued | 2000-08-01 | en_US |
dc.identifier.issn | 0018-9200 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/4.859509 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30351 | - |
dc.description.abstract | An electrostatic discharge (ESD) protection design is proposed to solve the ESD protection challenge to the analog pins for high-frequency or current-mode applications. By including an efficient power-rails clamp circuit into the analog input/output (I/O) pin, the device dimension (W/L) of an ESD clamp device connected to the I/O pad in the analog ESD protection circuit can be reduced to only 50/0.5 (mu m/mu m) in a 0.35-mu m silicided CMOS process, but it can sustain the human body model (HBM) and machine model (MM) ESD level of up to 6 kV (400 V). With such a smaller device dimension, the input capacitance of this analog ESD protection circuit can be significantly reduced to only similar to 1.0 pF (including the bond-pad capacitance) for high-frequency applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | analog pin | en_US |
dc.subject | electrostatic discharge | en_US |
dc.subject | ESD | en_US |
dc.subject | input capacitance | en_US |
dc.subject | on-chip ESD protection circuit | en_US |
dc.title | ESD protection design on analog pin with very low input capacitance for high-frequency or current-mode applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/4.859509 | en_US |
dc.identifier.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | en_US |
dc.citation.volume | 35 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 1194 | en_US |
dc.citation.epage | 1199 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000088717000015 | - |
dc.citation.woscount | 42 | - |
顯示於類別: | 期刊論文 |