完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Sun, KW | en_US |
dc.contributor.author | Song, TS | en_US |
dc.contributor.author | Wang, SY | en_US |
dc.contributor.author | Lee, CP | en_US |
dc.date.accessioned | 2014-12-08T15:45:17Z | - |
dc.date.available | 2014-12-08T15:45:17Z | - |
dc.date.issued | 2000-05-01 | en_US |
dc.identifier.issn | 0167-9317 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0167-9317(99)00475-X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30529 | - |
dc.description.abstract | We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of highly nonequilibrium carrier distributions in the p-doped Al0.32Ga0.68As/GaAs quantum wells with well width of 5 and 3 nm. The spectra at high densities (greater than or equal to 10(10) cm(-2)) demonstrate that the initially narrow electron distribution is altered in a time less than or equal to the LO phonon emission time as the result of rapid carrier-carrier scattering. At about the same excitation density (similar to 10(10) cm(-2)), the carrier-carrier scattering rate is faster in 3 nm quantum wells in comparison to 5 nm wells. Our results also indicate that carrier-carrier scattering becomes as significant as LO phonon emission at density of about 1 X 10(10) cm(-2) in the 5 nm quantum wells. (C) 2000 Elsevier Science B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | carrier-carrier scattering | en_US |
dc.subject | LO phonon emission | en_US |
dc.subject | nonthermal carrier distributions | en_US |
dc.title | Nonthermal carrier dynamics in AlxGa1-xAs/GaAs quantum wells | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/S0167-9317(99)00475-X | en_US |
dc.identifier.journal | MICROELECTRONIC ENGINEERING | en_US |
dc.citation.volume | 51-2 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 189 | en_US |
dc.citation.epage | 194 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000087431500025 | - |
顯示於類別: | 會議論文 |