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dc.contributor.authorLee, SCen_US
dc.contributor.authorLee, WIen_US
dc.date.accessioned2014-12-08T15:45:20Z-
dc.date.available2014-12-08T15:45:20Z-
dc.date.issued2000-05-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.39.2583en_US
dc.identifier.urihttp://hdl.handle.net/11536/30558-
dc.description.abstractWe study the stability of Ga0.5In0.5P acid Al0.4Ga0.6As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga0.5In0.5P or Al0.4Ga0.6As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga0.5In0.5P barrier layer is more stable than the Al0.4Ga0.6As layer at higher oxidation temperatures and longer periods of oxidation time.en_US
dc.language.isoen_USen_US
dc.subjectwet oxidationen_US
dc.subjectAlAsen_US
dc.subjectGa0.5In0.5Pen_US
dc.subjectAlGaAsen_US
dc.subjectGaAsen_US
dc.subjectinterfaceen_US
dc.titleGa0.5In0.5P barrier layer for wet oxidation of AlAsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.39.2583en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume39en_US
dc.citation.issue5Aen_US
dc.citation.spage2583en_US
dc.citation.epage2584en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000088909500019-
dc.citation.woscount3-
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