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dc.contributor.authorLin, JJen_US
dc.date.accessioned2014-12-08T15:45:27Z-
dc.date.available2014-12-08T15:45:27Z-
dc.date.issued2000-04-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4526(99)00732-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/30614-
dc.description.abstractWe have studied and compared the inelastic electron dephasing scattering times in disordered metals with significantly different characteristics. Both the temperature dependence and electron elastic mean-free-path (I) dependence of the electron-phonon scattering times, tau(ep), are determined from weak-localization studies. Our experimental results suggest that tau(ep)(-1) similar to T-2 in numerous crystalline disordered dilute Ti1-xAlx, dilute Ti1-xSnx, Au50Pd50, and Ti73Al27 alloys. However, our results do not support a universal dependence of tau(ep)(-1) on l among these various metals. Our observation of the T-2-law is in disagreement with current theoretical concept for electron-phonon interaction in disordered metals. In addition, we have inferred the critical electron-electron scattering times, tau(EE), in a number of very low-diffusivity thick Sc, RuO2, and IrO2 films. We find that tau(EE)(-1) similar to T and also that tau(EE)(-1) is independent of l. This observation is understood in terms of the current theory for inelastic electron-electron scattering in bulk metals near the mobility edge. Our results altogether establish a crossover of the inelastic electron dephasing from electron-phonon scattering to electron-electron scattering as the amounts of disorder greatly increase and the systems move significantly toward the Anderson transition. (C) 2000 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectdephasing timesen_US
dc.subjectelectron-phonon relaxationen_US
dc.subjectelectron-electron relaxationen_US
dc.subjectdisordered metalsen_US
dc.titleInelastic electron dephasing scattering times in disordered metalsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0921-4526(99)00732-2en_US
dc.identifier.journalPHYSICA Ben_US
dc.citation.volume279en_US
dc.citation.issue1-3en_US
dc.citation.spage191en_US
dc.citation.epage195en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000085314700053-
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