A novel Si-B diffusion source for p(+)-poly-Si gate

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DC Field	Value	Language
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Kuo, CP	en_US
dc.contributor.author	Chen, TP	en_US
dc.contributor.author	Lei, TF	en_US
dc.date.accessioned	2014-12-08T15:46:12Z	-
dc.date.available	2014-12-08T15:46:12Z	-
dc.date.issued	1999-10-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31077	-
dc.description.abstract	In this paper, we report a novel Si-B diffusion source for p(+)-polySi gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can br effectively suppressed using this process. All the electrical properties of the MOS capacitors are significantly improved over the conventional BF2+ or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs. (C) 1999 The Electrochemical Society. S0013-4651(99)03-017-7. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	A novel Si-B diffusion source for p(+)-poly-Si gate	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	146	en_US
dc.citation.issue	10	en_US
dc.citation.spage	3852	en_US
dc.citation.epage	3855	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000083126400053	-
dc.citation.woscount	0	-
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