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dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorWang, Tzu-Mingen_US
dc.contributor.authorLiao, Hung-Taien_US
dc.date.accessioned2014-12-08T15:46:26Z-
dc.date.available2014-12-08T15:46:26Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2078-0en_US
dc.identifier.issn0271-4302en_US
dc.identifier.urihttp://hdl.handle.net/11536/31253-
dc.description.abstractA new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed-voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-mn 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.en_US
dc.language.isoen_USen_US
dc.title2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issueen_US
dc.typeArticleen_US
dc.identifier.journalPROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10en_US
dc.citation.spage820en_US
dc.citation.epage823en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000258532100209-
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