完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, MJ | en_US |
dc.contributor.author | Hou, CS | en_US |
dc.date.accessioned | 2014-12-08T15:46:27Z | - |
dc.date.available | 2014-12-08T15:46:27Z | - |
dc.date.issued | 1999-07-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/55.772376 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31267 | - |
dc.description.abstract | The inter-poly-oxide (IPO) capacitor is one of the main elements in present mixed-mode CMOS process technologies, However, the phenomenon of poly depletion causes a significant change in the measured capacitance with applied voltage, This effect, expressed in terms of the voltage coefficient of capacitance (VCC), can seriously deteriorate analog precision. In this letter, a novel cross-coupled scheme is proposed for the IPO capacitors. The resulting VCC has a very low measured value of 2 ppm/V in a 0.35-mu m standard mixed-mode CMOS process, achieved without any unconventional approaches. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | analog circuits | en_US |
dc.subject | capacitor | en_US |
dc.subject | CMOS | en_US |
dc.subject | mixed-mode | en_US |
dc.subject | poly depletion | en_US |
dc.subject | voltage coefficient of capacitance | en_US |
dc.title | A novel cross-coupled inter-poly-oxide capacitor for mixed-mode CMOS processes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/55.772376 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 20 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 360 | en_US |
dc.citation.epage | 362 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000081151400016 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |